Tunable Quantum Tunneling of Magnetic Domain Walls

نویسنده

  • J. Brooke
چکیده

Perhaps the most anticipated, yet experimentally elusive, macroscopic quantum phenomenon 1 has been spin tunneling in a ferromagnet 2 , which may be formulated in terms of domain wall tunneling 3,4. One approach is to focus on mesoscopic systems where the number of domain walls is finite and the motion of a single wall has measurable consequences. Research of this type includes magnetotransport measurements on thin ferromagnetic wires 5 and magnetization experiments on single particles 6,7 , nanomagnet ensembles 8-10 , and rare earth multilayers 11. A second method is to investigate macroscopic disordered ferromagnets 12-15 , whose dynamics are dominated by domain wall motion, and search the associated relaxation time distribution functions for quantum effects. Both approaches have revealed clear deviations from thermal relaxation in the form of finite timescales that persist as temperature T approaches zero. But while the classical, thermal processes in these experiments are easily regulated via T, the quantum processes have not been tunable, making definitive interpretation in terms of tunneling difficult. Here we report on a disordered magnetic system for which it is possible to adjust the quantum tunneling probabilities with a knob in the laboratory. We are able to model both the classical, thermally activated response at high 2 temperatures and the athermal, tunneling behavior at low temperatures within a simple, unified framework. Fig. 1a depicts domain wall motion in the classical and quantum limits against the background of a fixed potential landscape, which pins the walls. In the classical case,

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls

The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...

متن کامل

Phase-field simulation of electric-field-induced in-plane magnetic domain switching in magnetic/ferroelectric layered heterostructures

Related Articles Spin configurations in Co2FeAl0.4Si0.6 Heusler alloy thin film elements Appl. Phys. Lett. 99, 182510 (2011) Quantum tunneling of the Bloch point in a magnetic film with strong uniaxial magnetic anisotropy Low Temp. Phys. 37, 690 (2011) Evolution of magnetic bubble domains in manganite films Appl. Phys. Lett. 99, 042503 (2011) 360° domain wall mediated reversal in rhombic Co/Cu/...

متن کامل

On the Observability of Meso- or Macro-scopic Quantum Coherence of Domain Walls in Magnetic Insulators

Results are presented of a numerical calculation of the tunneling gap for a domain wall moving in the double well potential of a pair of voids in a magnetic insulator. Both symmetric and asymmetric double well potentials are considered. It is found that, even in the absence of dissipation, the prospect for observing quantum coherence on a mesoor macro-scopic scale appears unlikely. PACS Indices...

متن کامل

Tunable conductance of magnetic nanowires with structured domain walls.

We show that in a magnetic nanowire with double magnetic domain walls, quantum interference results in spin-split quasistationary states localized mainly between the domain walls. Spin-flip-assisted transmission through the domain structure increases strongly when these size-quantized states are tuned on resonance with the Fermi energy, e.g., upon varying the distance between the domain walls w...

متن کامل

Switchable hardening of a ferromagnet at fixed temperature.

The intended use of a magnetic material, from information storage to power conversion, depends crucially on its domain structure, traditionally crafted during materials synthesis. By contrast, we show that an external magnetic field, applied transverse to the preferred magnetization of a model disordered uniaxial ferromagnet, is an isothermal regulator of domain pinning. At elevated temperature...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002